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MJ11028

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPEC

MOSPEC

MOSPEC

MJ11028

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉

Motorola

MJ11028

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

SEME-LAB

MJ11028

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MJ11028

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MJ11028

High?묬urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028_05

High?묬urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028_08

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028G

High?묬urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028G

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11028G

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-204AE 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 60V 50A TO204

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ITS-P-11028NW

SlimIn-LineConnectors

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

PS11028

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

晶体管资料

  • 型号:

    MJ11028

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    开关管 (S)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    50A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

  • 最大耗散功率:

    300W

  • 放大倍数:

    β>1000

  • 图片代号:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    50

  • wtest:

    300

详细参数

  • 型号:

    MJ11028

  • 功能描述:

    达林顿晶体管 50A 60V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
isc
2024+
TO-3
5000
询价
MOT
N/A
5890
询价
2016+
TO-263
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
MOT
2017+
TO-3
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
MOT/ON
16+
TO-3
500
原装现货假一罚十
询价
MOT
23+
TO-3
5000
原装正品,假一罚十
询价
MOT
23+
SOP8
18000
询价
ISC
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MOT/ON
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
询价
MOT/ON
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
更多MJ11028供应商 更新时间2024-4-26 12:45:00