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MJ11028

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJ11028

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJ11028

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11028

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJ11028

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11028

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11028

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJ11028

High?묬urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11028_05

High?묬urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11028_08

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    MJ11028

  • 功能描述:

    达林顿晶体管 50A 60V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
MOT
24+
N/A
5890
询价
MOT/ON
24+
TO-3
500
原装现货假一罚十
询价
MOT
23+
TO-3
5000
原装正品,假一罚十
询价
ISC
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MOT/ON
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
询价
MOT/ON
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
MOTOROLA/摩托罗拉
23+
TO3
50000
全新原装正品现货,支持订货
询价
MOT
23+
TO3
50000
全新原装正品现货,支持订货
询价
BZD
24+
TO-263
9
原装现货假一赔十
询价
ON/安森美
22+
TO-3
6000
十年配单,只做原装
询价
更多MJ11028供应商 更新时间2025-7-19 16:00:00