| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A 文件：153.97 Kbytes 页数：4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi 文件：154.67 Kbytes 页数：3 Pages | MOSPEC 统懋 | MOSPEC | ||
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • 文件：153.97 Kbytes 页数：4 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A • Complement to Type MJ11028 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applic 文件：53.61 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P 文件：84.48 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de 文件：59.19 Kbytes 页数：2 Pages | SEME-LAB | SEME-LAB | ||
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • 文件：153.97 Kbytes 页数：4 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi 文件：154.67 Kbytes 页数：3 Pages | MOSPEC 统懋 | MOSPEC | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A 文件：153.97 Kbytes 页数：4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de 文件：59.19 Kbytes 页数：2 Pages | SEME-LAB | SEME-LAB |
替换型号
- 0073-0020
- 02-300574
- 07-28816-81
- 01SS330000A
- 1001-9735
- 103-237
- 1039956300
- 1103-3669
- 11119016
- 1157-8689
- 1181-7194
- 1200-2382
- 1229-8725
- 1266-2053
- 1266-2953
- 1316-7911
- 1316-7929
- 1368-2638
- 1377-2777
- 142137
- 144923
- 145113
- 146138
- 146911
- 147464
- 148805
- 150365
- 158578
- 159974
- 167-006A
- 167-006B
- 177121
- 185898
- 186671
- 2002600107
- 2002600149
- 2002600198
- 2119-103-0603
- 2169-401-5808
- 21A119-045
- 23115822
- 23115878
- 23115922
- 23316411
- 2335991
- 264P24401
- 264P244010
- 264P244020
- 266P01002
- 35SI-UPC574J
- 35SZ-UPC574J
- 36003049
- 415100574J
- 4152056300
- 46-86465-3
- 46-86474-3
- 48-90445A97
- 4800155144
- 4835-209-87264
- 48S00155144
- 48S155144
- 48X90445A97
- 48X90456A34
- 51-90305A59
- 51X90305A59
- 530176-1
- 5302390086
- 5350611
- 5635-HZT33
- 56A113-1
- 6192140020
- 6192140620
- 67-10430-01
- 67-90430-01
- 8-759-157-40
- 8-759-157-41
- 9-901-371-01
- 903-10056
- 903-483
- 903-885
- 905-190
- DGL5630
- DHHZT33
- DNMPC574J
- DNUPC574J
- ECG615
- ECG615A
- EP16X54
- EW16X381
- EW84X12
- EW84X273
- EW84X431
- HZT-33
- HZT-3301
- HZT33
- HZT33-01
- HZT33-02
- HZT33-02-TE
- HZT33-02T
- HZT33-04
- HZT33-04T
- HZT33-05
- HZT33-10
- H2T33-12
- HZT33S1
- I02190574J
- I02990574J
- 102190574J
- I031956310
- I039956300
- IX0037CE
- KA33V
- L5630
- L5631
- L5631-AA
- MJC574J
- MP0574J
- MPC-574J
- MPC574J
- MX-4478
- MZT33-01
- NTE615
- NTE615P
- PC574J
- RH-IX0037CEZZ
- SI-UPC574J
- SK9179
- SK9976
- SN16704C
- TAA550-B
- TVSHZT33
- TVSHZT33S1
- TVSMP0574J
- TVSMPC574J
- TVSUP574J
- TVSUPC574J
- U574
- U574(IC)
- U574K
- UPC-574
- UPC-574J
- UPC574
- UPC574-J
- UPC5742
- UPC574I
- UPC574J
- UPC574J(L)
- UPC574J(M)
- UPC574J(V)
- UPC574J-G
- UPC574J-KL
- UPC574J-T
- UPC574JA
- UPC574JAG
- UPC574JC
- UPC574JK
- UPC574JL
- UPC574JM
- UPC574JT
- UPC574K
- UPC574K02L
- UPC574V
- VHIUPC574JT-1
- WEP615/615
- X0249CE
- X37C
- Y15310158
- ZTK-33
- ZTK33
- ZTK33A
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,
- 最大耗散功率：
90W
- 放大倍数：
β>1000
- 图片代号：
E-44
- vtest：
60
- htest：
999900
- atest：
8
- wtest：
90
技术参数
- Bvdss(V)：
120
- Id(A)：
100
- Vgs(th)(V)：
2.0-4.0
- Rds(on)Max@10V(mΩ)：
10
- Qg(nc)：
55
- Ciss(pF)：
4150
- Rg(Ω)：
3.2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
SOP |
16567 |
正品:QQ;2987726803 |
询价 | |||
TI |
2021 |
BGA |
1000 |
全新、原装 |
询价 | ||
N/A |
25+ |
SMD |
1000 |
原装进口支持检测 |
询价 | ||
TOSHIBA/东芝 |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
XX |
23+ |
SOT-234 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
XX |
SOT-234 |
9045 |
询价 | ||||
Relmon/瑞盟 |
25+ |
QFN20 |
5000 |
只做原装正品实单带TP来砍 |
询价 |
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
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- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
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- TL074
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- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
