COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：21.7 Kbytes 页数：1 Pages

WINGS

永盛电子

POWER TRANSISTORS(15A,150-250V,175W)

15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN

文件：206.76 Kbytes 页数：4 Pages

MOSPEC

统懋

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus

文件：235.08 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

文件：229.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(15A,150-250V,175W)

15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN

文件：206.76 Kbytes 页数：4 Pages

MOSPEC

统懋

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=-250V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-3.4V(Max) @IC=-15A APPLICATIONS · Low current high speed switching applications · Low power audio amplifier

文件：246.96 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

文件：229.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

文件：229.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min.) • High DC Current Gain- : hFE= 400(Min.)@IC= 10A • Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A APPLICATIONS • Designed for general purpose amplifiers, low frequency sw

文件：81.1 Kbytes 页数：2 Pages

ISC

无锡固电