DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

文件：157.15 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

文件：157.15 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 20A • Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A • Complement to Type MJ11011 APPLICATIONS • Designed for use as output devices in comple

文件：51.91 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：19.71 Kbytes 页数：1 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：21.75 Kbytes 页数：1 Pages

WINGS

永盛电子

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -20A • Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A • Complement to Type MJ11014 APPLICATIONS • Designed for use as output devices in complementary

文件：53.51 Kbytes 页数：2 Pages

ISC

无锡固电

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

文件：157.15 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

文件：140.07 Kbytes 页数：3 Pages

MOSPEC

统懋