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MJ11013

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun

MOSPEC

MOSPEC

MOSPEC

MJ11013

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C

MotorolaMotorola, Inc

摩托罗拉

Motorola

MJ11013

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

MJ11013

Power Transistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

MJ11013

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJ11013

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MJ11013

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MJ11013

Bipolar PNP Device in a Hermetically sealed TO3

SEME-LAB

Seme LAB

SEME-LAB

11013

TESTJACKS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

11013-R

TESTJACKS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

AC11013

DUAL4INPUTNANDSCHMITTTRIGGER

DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

ACE11013A

P-ChannelEnhancementModeMOSFET

ACE

ACE Technology Co., LTD.

ACE

ACT11013

DUAL4INPUTNANDSCHMITTTRIGGER

DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

L-11013

CURRENTSENSEINDUCTORS

RHOMBUS-IND

Rhombus Industries Inc.

RHOMBUS-IND

PS11013

FLAT-BASETYPEINSULATEDTYPE

INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON

POWEREX

POWEREX

POWEREX

PS11013

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

PS11013

ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE

INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

晶体管资料

  • 型号:

    MJ11013

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl+Di

  • 性质:

    开关管 (S)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    90V

  • 最大电流允许值:

    30A

  • 最大工作频率:

    >4MHZ

  • 引脚数:

    2

  • 可代换的型号:

    BDX68B...C,

  • 最大耗散功率:

    200W

  • 放大倍数:

    β>1000

  • 图片代号:

    E-44

  • vtest:

    90

  • htest:

    4000100

  • atest:

    30

  • wtest:

    200

详细参数

  • 型号:

    MJ11013

  • 功能描述:

    达林顿晶体管 PNP Power

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商 型号 品牌 批号 封装 库存 备注 价格
ON/安森美
17+
TO-3
31518
原装正品 可含税交易
询价
ON
2017+
TO-3
15858
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
TO-3
10000
全新
询价
MOT/ON
16+
TO-3
500
原装现货假一罚十
询价
MOT
1116+
DC86PACKAGET
6869
绝对原装现货
询价
MOT
16+
NA
8800
原装现货,货真价优
询价
MOT
23+
6
原装现货!品质为先!请来电垂询!
询价
MOT
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
MOT
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
询价
ISC
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多MJ11013供应商 更新时间2024-3-29 14:00:00