零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MJ11013 | POWER TRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun | MOSPEC MOSPEC | ||
MJ11013 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C | MotorolaMotorola, Inc 摩托罗拉 | ||
MJ11013 | PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components Wing Shing Computer Components | ||
MJ11013 | Power Transistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJ11013 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJ11013 | isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJ11013 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
MJ11013 | Bipolar PNP Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB | ||
TESTJACKS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
TESTJACKS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
P-ChannelEnhancementModeMOSFET | ACE ACE Technology Co., LTD. | |||
DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
CURRENTSENSEINDUCTORS | RHOMBUS-IND Rhombus Industries Inc. | |||
FLAT-BASETYPEINSULATEDTYPE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON | POWEREX POWEREX | |||
PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON | MitsubishiMITSUBISHI electlic 三菱电机 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-P+Darl+Di
- 性质:
开关管 (S)_功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
90V
- 最大电流允许值:
30A
- 最大工作频率:
>4MHZ
- 引脚数:
2
- 可代换的型号:
BDX68B...C,
- 最大耗散功率:
200W
- 放大倍数:
β>1000
- 图片代号:
E-44
- vtest:
90
- htest:
4000100
- atest:
30
- wtest:
200
详细参数
- 型号:
MJ11013
- 功能描述:
达林顿晶体管 PNP Power
- RoHS:
否
- 制造商:
Texas Instruments
- 配置:
Octal
- 晶体管极性:
NPN 集电极—发射极最大电压
- VCEO:
50 V 发射极 - 基极电压
- VEBO:
集电极—基极电压
- 最大直流电集电极电流:
0.5 A
- 最大工作温度:
+ 150 C
- 安装风格:
SMD/SMT
- 封装/箱体:
SOIC-18
- 封装:
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
17+ |
TO-3 |
31518 |
原装正品 可含税交易 |
询价 | ||
ON |
2017+ |
TO-3 |
15858 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TO-3 |
10000 |
全新 |
询价 | ||||
MOT/ON |
16+ |
TO-3 |
500 |
原装现货假一罚十 |
询价 | ||
MOT |
1116+ |
DC86PACKAGET |
6869 |
绝对原装现货 |
询价 | ||
MOT |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
MOT |
23+ |
6 |
原装现货!品质为先!请来电垂询! |
询价 | |||
MOT |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
MOT |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |