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型号	下载订购	功能描述	制造商上传企业	LOGO
MJ10016	文件：217.07 Kbytes Page：6 Pages	NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw 文件：217.07 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJ10016	文件：181.25 Kbytes Page：4 Pages	POWER TRANSISTORS(50A,400-500V,250W) SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw 文件：181.25 Kbytes 页数：4 Pages	MOSPEC 统懋	MOSPEC
MJ10016	文件：217.07 Kbytes Page：6 Pages	50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw 文件：217.07 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJ10020	文件：293.82 Kbytes Page：8 Pages	60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated 文件：293.82 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJ10020	文件：101.44 Kbytes Page：2 Pages	NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated s 文件：101.44 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJ10020	文件：293.82 Kbytes Page：8 Pages	NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated 文件：293.82 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJ10020	文件：1.85377 Mbytes Page：10 Pages	NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS FEATURES: 1. Fast Turn–Off Times 150 ns Inductive Fall Time at 25º C (Typ) 750 ns Inductive Storage Time at 25 ºC (Typ) 2. Operating Temperature Range –65 to +200º C 3. 100º C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturatio 文件：1.85377 Mbytes 页数：10 Pages	CDIL	CDIL
MJ10020	文件：211.84 Kbytes Page：4 Pages	POWER TRANSISTORS(60A,200-250V,250W) 文件：211.84 Kbytes 页数：4 Pages	MOSPEC 统懋	MOSPEC
MJ10021	文件：293.82 Kbytes Page：8 Pages	NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated 文件：293.82 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJ10021	文件：101.44 Kbytes Page：2 Pages	NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated s 文件：101.44 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

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替换型号

晶体管资料

型号：
MJ1000
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-N+Darl+Di
性质：
低频或音频放大（LF）_开关管（S）_功率放大（L
封装形式：
直插封装
极限工作电压：
60V
最大电流允许值：
8A
最大工作频率：
<1MHZ或未知
引脚数：
2
可代换的型号：
BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,
最大耗散功率：
90W
放大倍数：
β>1000
图片代号：
E-44
vtest：
60
htest：
999900
atest：
8
wtest：
90

技术参数

Bvdss(V)：
120
Id(A)：
100
Vgs(th)(V)：
2.0-4.0
Rds(on)Max@10V(mΩ)：
10
Qg(nc)：
55
Ciss(pF)：
4150
Rg(Ω)：
3.2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市旺财半导体有限公司	ML		23+	SOP	16567	正品:QQ;2987726803	询价
深圳市恒创达实业有限公司	MO	TI	2021	BGA	1000	全新、原装	询价
深圳市鸿昌盛电子科技有限公司	MPM3695GBH-100-0001	N/A	25+	SMD	1000	原装进口支持检测	询价
深圳市金芯世纪电子有限公司	MQ	TOSHIBA/东芝	22+	SOT-89	100000	代理渠道/只做原装/可含税	询价
深圳市威尔健半导体有限公司	MR	XX	23+	SOT-234	50000	全新原装正品现货,支持订货	询价
上海金庆电子技术有限公司	MR	XX		SOT-234	9045		询价
深圳市三芯电子有限公司	MS1006	Relmon/瑞盟	25+	QFN20	5000	只做原装正品实单带TP来砍	询价

更多MJ供应商更新时间2026-1-27 10:31:00

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