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MJ10021

NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS

FEATURES: 1. Fast Turn–Off Times 150 ns Inductive Fall Time at 25º C (Typ) 750 ns Inductive Storage Time at 25 ºC (Typ) 2. Operating Temperature Range –65 to +200º C 3. 100º C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturatio

文件:1.85377 Mbytes 页数:10 Pages

CDIL

MJ10021

POWER TRANSISTORS(60A,200-250V,250W)

文件:211.84 Kbytes 页数:4 Pages

MOSPEC

统懋

MJ10021

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

文件:293.82 Kbytes 页数:8 Pages

MOTOROLA

摩托罗拉

MJ10022

250WATT NPN TYPE SILICON DARLINGTON TRANSISTORS

Features ※ Reversed Biased SOA with Inductive Loads ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Switching Regulators ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Data ※ Case:TO-3 meta

文件:811.2 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MJ10022

40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 and MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchm

文件:300.65 Kbytes 页数:8 Pages

MOTOROLA

摩托罗拉

MJ10022

POWER TRANSISTORS(40A,350-400V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE

文件:202.77 Kbytes 页数:4 Pages

MOSPEC

统懋

MJ10023

POWER TRANSISTORS(40A,350-400V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE

文件:202.77 Kbytes 页数:4 Pages

MOSPEC

统懋

MJ10023

250WATT NPN TYPE SILICON DARLINGTON TRANSISTORS

Features ※ Reversed Biased SOA with Inductive Loads ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Switching Regulators ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Data ※ Case:TO-3 meta

文件:811.2 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MJ10023

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-3 packaging • Very high DC current gain • Fast turn-off times • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Electronic

文件:285.04 Kbytes 页数:2 Pages

ISC

无锡固电

MJ10023

Silicon NPN Power Darlington Transistor

GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.

文件:189.15 Kbytes 页数:1 Pages

WINGS

永盛电子

晶体管资料

  • 型号:

    MJ1000

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,

  • 最大耗散功率:

    90W

  • 放大倍数:

    β>1000

  • 图片代号:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    8

  • wtest:

    90

技术参数

  • Bvdss(V):

    120

  • Id(A):

    100

  • Vgs(th)(V):

    2.0-4.0

  • Rds(on)Max@10V(mΩ):

    10

  • Qg(nc):

    55

  • Ciss(pF):

    4150

  • Rg(Ω):

    3.2

供应商型号品牌批号封装库存备注价格
23+
SOP
16567
正品:QQ;2987726803
询价
TI
2021
BGA
1000
全新、原装
询价
N/A
25+
SMD
1000
原装进口支持检测
询价
TOSHIBA/东芝
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
XX
23+
SOT-234
50000
全新原装正品现货,支持订货
询价
XX
SOT-234
9045
询价
Relmon/瑞盟
25+
QFN20
5000
只做原装正品实单带TP来砍
询价
更多MJ供应商 更新时间2026-1-27 10:31:00