MJ11021

POWER TRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MJ11021

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus

MJ11021

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11021

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

MJ11021

Complementary Darlington Silicon Power Transistors

MJ11021

Complementary Darlington Silicon Power Transistors

MJ11021

Package：TO-204AA，TO-3；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 250V 15A TO204

MJ11021G

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11021G

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-250V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):-3.4V(Max)@IC=-15A APPLICATIONS ·Lowcurrenthighspeedswitchingapplications ·Lowpoweraudioamplifier

MJ11021_05

Complementary Darlington Silicon Power Transistors