| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) • | MotorolaMotorola, Inc 摩托罗拉 |  | |
MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJ11029 | POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi | MOSPEC MOSPEC |  | |
MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde | SEME-LAB Seme LAB |  | |
MJ11029 | High-Current Complementary Silicon Power Transistors High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
MJ11029 | isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=-60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A •ComplementtoTypeMJ11028 APPLICATIONS •Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplic | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MJ11029 | High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJ11029 | High?묬urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
High?묬urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest | ETC1List of Unclassifed Manufacturers 未分类制造商 |  |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
开关管 （S）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
50A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
- 最大耗散功率：
300W
- 放大倍数：
β>1000
- 图片代号：
E-44
- vtest：
60
- htest：
999900
- atest：
50
- wtest：
300
详细参数
- 型号：
MJ11029
- 功能描述：
达林顿晶体管 50A 60V Bipolar
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶体管极性：
NPN 集电极—发射极最大电压
- VCEO：
50 V 发射极 - 基极电压
- VEBO：
集电极—基极电压
- 最大直流电集电极电流：
0.5 A
- 最大工作温度：
+ 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOIC-18
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
22+ |
TO |
14 |
只做原装进口 免费送样!! |
询价 | ||
isc |
2024+ |
TO-3 |
5000 |
询价 | |||
AN |
2016+ |
原厂封装 |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
询价 | ||
MOT |
N/A |
6980 |
询价 | ||||
MOT/ON |
16+ |
TO-3 |
2500 |
原装现货假一罚十 |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON |
21+ |
TO-3 |
12588 |
原装现货价格优势 |
询价 | ||
MOT/ON |
专业铁帽 |
TO-3 |
2500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
ON |
2020+ |
TO-3 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
