COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

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ONSEMI

安森美半导体

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

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SEME-LAB

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

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MOSPEC

统懋

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

文件：153.97 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

isc Silicon NPN Darlington Power Transistor

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ISC

无锡固电

High?묬urrent Complementary Silicon Power Transistors

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ONSEMI

安森美半导体

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

50 A，30V，NPN 达林顿双极功率晶体管

此类双极功率达林顿晶体管用作互补通用放大器应用中的输出器件。 • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc\n• Curves to 100 A (Pulsed)\n• Diode Protection to Rated IC\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Junction Temperature to +200°C\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

Trans Darlington NPN 90V 50A 3-Pin(2+Tab) TO-204 Tray

NJS