60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —

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Motorola

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSITORS

Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa

文件：241.69 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

isc Silicon PNP Darlington Power Transistor

文件：291.18 Kbytes 页数：2 Pages

ISC

无锡固电

High-Current Complementary Silicon Power Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT PNP 80V 60A 3-Pin(2+Tab) TO-204 Tray

NJS

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体