60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —

文件：241.69 Kbytes 页数：6 Pages

Motorola

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSITORS

Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa

文件：241.69 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

isc Silicon NPN Darlington Power Transistor

文件：291.64 Kbytes 页数：2 Pages

ISC

无锡固电

High-Current Complementary Silicon Power Transistors

文件：121.94 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJ14002

文件：10.95 Kbytes 页数：1 Pages

SEME-LAB

60 A, 80 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications..The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices. • High Current Capability - IC Continuous = 60 Amperes\n• DC Current Gain - hFE = 15-100 @ IC = 50 Adc\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-204AE；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 60A TO204

ONSEMI

安森美半导体