6405

InsulationPiercingClips

A6405

ACFilmCapacitorsLighting

Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat

AO6405

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

AO6405

30VP-ChannelMOSFET

AO6405

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde

AO6405-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

AO6405L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde

AON6405

30VP-ChannelMOSFET

AON6405

P-Channel30V(D-S)MOSFET

AON6405L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON6405LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=-30V ID=-30A(VGS=-1

ATA6405

12/24VSYSTEMPOWERSUPPLYIC

BOXER-6405

FanlessCompactEmbeddedComputerwithIntel®Celeron/Pentium™Processor

Features ■SlimBoxerDesign:37mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount

BOXER-6405M

FanlessCompactEmbeddedComputerwithIntel®Celeron®/Pentium®Processor

Features ■SlimBoxerDesign:42mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount

CEB6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V.

CED6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant.

CEM6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEP6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V.

CEU6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant.

CEZ6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-21A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=62mW@VGS=-4.5V.

CEZC6405

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-17A,RDS(ON)=48mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=65mW@VGS=-4.5V.