Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv

文件：531.18 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=75mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：347.67 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件：482.35 Kbytes 页数：7 Pages

SANYO

三洋

Single N-Channel Power MOSFET

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv

文件：531.18 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv

文件：531.18 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

文件：482.35 Kbytes 页数：7 Pages

SANYO

三洋