Single N-Channel Power MOSFET

Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：555.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET Low-Voltage Driver Switching Device Applications

Low-Voltage Driver Switching Device Applications Features • ON-resistance RDS(on)1=17mΩ (typ.) • 1.2V drive • Halogen free compliance • Protection diode in

文件：354.08 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：475.52 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Low-Voltage Driver Switching Device Applications

文件：489.08 Kbytes 页数：7 Pages

SANYO

三洋

单 N 沟道功率 MOSFET，20V，8A，22mΩ

MCH6448 is a Power MOSFET, 20V, 22mΩ, 8A, Single N-Channel for Low-Voltage Driver Switching Device Application. • Low On-Resistance :RDS(on) = 22 mΩ (max) at VGS = 4.5 V, ID = 4 A\n• Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation\n• 1.2V Drive\n• Drive at Low Voltage\n• ESD Diode - Protected Gate\n• ESD Resistance\n• Pb-Free, Halogen Free and RoHS Compliance\n• Environmental Consi;

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：555.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET

Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：555.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Low-Voltage Driver Switching Device Applications

文件：489.08 Kbytes 页数：7 Pages

SANYO

三洋