P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • High ESD voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. • Composite type with 2 MOSFETs contained in a single package, facilitati

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P-Channel Silicon MOSFET General-Purpose Switching Device Applications

ONSEMI

安森美半导体

2.8 - 4 AMPS 200 - 1000 VOLTS 30 - 60 nsec HYPER FAST RECOVERY RECTIFIER

文件：145.12 Kbytes 页数：2 Pages

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HYPER FAST RECOVERY RECTIFIER

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SSDI

2.8 - 4 AMPS 200 - 1000 VOLTS 30 - 60 nsec HYPER FAST RECOVERY RECTIFIER

文件：145.12 Kbytes 页数：2 Pages

SSDI