P CHANNEL MOS SILICON TRANSISTOR

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.

文件：41.16 Kbytes 页数：4 Pages

SANYO

三洋

P CHANNEL MOS SILICON TRANSISTOR

ONSEMI

安森美半导体

触摸芯片全系列

文件：885.417 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PDF上传者：深圳市旺财半导体有限公司

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

文件：91.67 Kbytes 页数：7 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

文件：128.419 Kbytes 页数：14 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

文件：94.36 Kbytes 页数：3 Pages

INTERSIL