P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -22A, RDS(ON) = 46mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 60mW @VGS = -4.5V.

文件：950.88 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -20A, RDS(ON) = 48mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 62mW @VGS = -4.5V. RoHS compliant.

文件：702.89 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -5.7A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 68mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：782.97 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -22A, RDS(ON) = 46mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 60mW @VGS = -4.5V.

文件：950.88 Kbytes 页数：5 Pages

CET-MOS

华瑞