HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

文件：147.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th

文件：199.99 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”OFF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

文件：80.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

文件：208.31 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

文件：208.31 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体