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L6385E

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385E

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385E

Package:8-DIP(0.300",7.62mm);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8DIP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED013TR

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED013TR

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED

Package:8-SOIC(0.154",3.90mm 宽);包装:管件 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED013TR

Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MAX6385

SC70,Single/DualLow-Voltage,Low-Power關PResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(µP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3µAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半导体

产品属性

  • 产品编号:

    L6385E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    独立式

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    17V(最大)

  • 逻辑电压 - VIL,VIH:

    1.5V,3.6V

  • 电流 - 峰值输出(灌入,拉出):

    400mA,650mA

  • 输入类型:

    反相

  • 上升/下降时间(典型值):

    50ns,30ns

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    8-DIP(0.300",7.62mm)

  • 供应商器件封装:

    8-DIP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8DIP

供应商型号品牌批号封装库存备注价格
STM
24+
1200
询价
ST
23+
8-DIP
26166
询价
ST
2016+
DIP-8
6523
房间原装进口现货假一赔十
询价
STMicroelectronics
23+
8-Dip
7750
全新原装优势
询价
ST
2020+
DIP-8
17780
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
24+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
STM
22+
原廠原封
5000
原装现货库存.价格优势!!
询价
ST
23+
SMD
8650
受权代理!全新原装现货特价热卖!
询价
STMicroelectronics
24+
50
324554
原装进口现货
询价
ST
23+
8-DIP
65600
询价
更多L6385E供应商 更新时间2025-5-21 15:30:00