Power management unit for microcontrolled ballast

Description The L6382D device is suitable for LED drivers embedding a PFC stage and a half-bridge stage. The L6382D includes 4 MOSFET driving stages (for the PFC, for the half-bridge, and for the auxiliary MOSFET) plus a power management unit (PMU) featuring also a reference able to supply the mi

文件：256.06 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Power management unit for microcontrolled ballast

Description The L6382D5 is suitable for microcontrolled electronic ballasts embedding a PFC stage and a half-bridge stage. The L6382D5 includes 4 MOSFET driving stages (for the PFC, for the half bridge, for the preheating MOSFET) plus a power management unit (PMU) featuring also a reference able

文件：263.6 Kbytes 页数：21 Pages

STMICROELECTRONICS

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Power management unit for microcontrolled ballast

Description The L6382D5 is suitable for microcontrolled electronic ballasts embedding a PFC stage and a half-bridge stage. The L6382D5 includes 4 MOSFET driving stages (for the PFC, for the half bridge, for the preheating MOSFET) plus a power management unit (PMU) featuring also a reference able

文件：263.6 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Power management unit for microcontrolled ballast

Description The L6382D device is suitable for LED drivers embedding a PFC stage and a half-bridge stage. The L6382D includes 4 MOSFET driving stages (for the PFC, for the half-bridge, and for the auxiliary MOSFET) plus a power management unit (PMU) featuring also a reference able to supply the mi

文件：256.06 Kbytes 页数：14 Pages

STMICROELECTRONICS

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HIGH-VOLTAGE HALF BRIDGE DRIVER

DESCRIPTION The L6384 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL co

文件：78.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

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HIGH-VOLTAGE HALF BRIDGE DRIVER

DESCRIPTION The L6384 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL co

文件：78.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

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High-voltage half bridge driver

Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS

文件：207.39 Kbytes 页数：17 Pages

STMICROELECTRONICS

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High-voltage half bridge driver

Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS

文件：207.39 Kbytes 页数：17 Pages

STMICROELECTRONICS

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High-voltage half bridge driver

Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS

文件：207.39 Kbytes 页数：17 Pages

STMICROELECTRONICS

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HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

文件：147.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

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