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L6385

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385

Package:8-DIP(0.300",7.62mm);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDG 8MINIDIP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385D

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385E

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385E

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED013TR

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385ED013TR

High-voltage high and low side driver

Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6385D013TR

Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

产品属性

  • 产品编号:

    L6385

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    独立式

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    17V(最大)

  • 逻辑电压 - VIL,VIH:

    1.5V,3.6V

  • 电流 - 峰值输出(灌入,拉出):

    400mA,650mA

  • 输入类型:

    反相

  • 上升/下降时间(典型值):

    50ns,30ns

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    8-DIP(0.300",7.62mm)

  • 供应商器件封装:

    8-迷你型 DIP

  • 描述:

    IC GATE DRVR HALF-BRIDG 8MINIDIP

供应商型号品牌批号封装库存备注价格
ST(意法)
2450
8-DIP(0.300
99996
询价
STM
09+
DIP-8
7841
只售全新原装货真实现货放心查询
询价
ST
23+
8-DIP
25898
询价
ST
10+
DIP-8
7800
全新原装正品,现货销售
询价
ST
24+
2000
询价
ST
24+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
N/A
22+
DIP
5000
原装现货库存.价格优势!!
询价
ST
24+
DIP-8
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
24+
DIP8
90000
一级代理商进口原装现货、假一罚十价格合理
询价
ST
24+
SOP-8
324554
原装进口现货
询价
更多L6385供应商 更新时间2025-5-24 13:30:00