带嵌入式自举二极管的HV高低侧驱动器

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink an • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •400 mA source \n •650 mA sink \n• Switching times 50/30 nsec rise/fall with 1 nF load \n• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down \n• Undervoltage lockout;

ST

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICS

意法半导体

Package：8-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

STMICROELECTRONICS

意法半导体