L6385E中文资料带嵌入式自举二极管的HV高低侧驱动器数据手册ST规格书

描述 Description

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half-bridge configurations.

The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.

The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.

The L6385E features the UVLO protection on both lower and upper driving sections (VCCand VBOOT), ensuring greater protection against voltage drops on the supply lines.

The device is available in a DIP-8 tube and SO-8 tube, and tape and reel packaging options.

特性 Features

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/nsec in full temperature range
• Driver current capability:
•400 mA source
•650 mA sink
• Switching times 50/30 nsec rise/fall with 1 nF load
• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
• Undervoltage lockout on lower and upper driving section
• Internal bootstrap diode
• Outputs in phase with inputs

简介

L6385E属于集成电路（IC）的栅极驱动器。由制造生产的L6385E栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。