HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”OFF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

文件：80.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

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High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件：217.74 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件：217.74 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件：217.74 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

文件：133.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P

文件：158.36 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

文件：133.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P

文件：158.36 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs

文件：207.3 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs

文件：207.3 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体