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L6387E

High-voltage high and low side driver

Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs

文件:207.3 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

L6387ED

High-voltage high and low side driver

Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs

文件:207.3 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

L6387ED013TR

High-voltage high and low side driver

Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs

文件:207.3 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

L6387E

高压高侧和低侧驱动器

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability \n •400 mA source \n •650 mA sink \n• Switching times 50/30 nsec rise/fall with 1 nF load \n• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down \n• Internal bootstrap di;

ST

意法半导体

L6387E

Package:8-DIP(0.300",7.62mm);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8DIP

STMICROELECTRONICS

意法半导体

L6387ED

Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICS

意法半导体

L6387ED013TR

Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO

STMICROELECTRONICS

意法半导体

产品属性

  • 产品编号:

    L6387E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    独立式

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    17V(最大)

  • 逻辑电压 - VIL,VIH:

    1.5V,3.6V

  • 电流 - 峰值输出(灌入,拉出):

    400mA,650mA

  • 输入类型:

    反相

  • 上升/下降时间(典型值):

    50ns,30ns

  • 工作温度:

    -45°C ~ 125°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    8-DIP(0.300",7.62mm)

  • 供应商器件封装:

    8-DIP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8DIP

供应商型号品牌批号封装库存备注价格
STMicroelectronics
25+
N/A
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
STM
22+
原廠原封
5000
原装现货库存.价格优势!!
询价
STM
23+
8-DIP
10826
专做原装正品,假一罚百!
询价
STM
24+
Tube
324554
原装进口现货
询价
ST
23+
8-DIP
65600
询价
STM
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
STMicroelectronics
24+
8-DIP
65200
一级代理/放心采购
询价
STM
25+
DIP-8
4854
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
2331
加我QQ或微信咨询更多详细信息,
询价
更多L6387E供应商 更新时间2026-1-19 16:12:00