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L6386E

High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件:217.74 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

L6386ED

High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件:217.74 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

L6386ED013TR

High-voltage high and low side driver

Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

文件:217.74 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

L6386E

带嵌入式比较器和自举二极管的HV高低侧驱动器

The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sin • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •400 mA source \n •650 mA sink \n• Switching times 50/30 nsec rise/fall with 1 nF load \n• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down \n• Undervoltage lockout;

ST

意法半导体

L6386E

Package:14-DIP(0.300",7.62mm);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14DIP

STMICROELECTRONICS

意法半导体

L6386ED

Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

L6386ED013TR

Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

产品属性

  • 产品编号:

    L6386E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    独立式

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    17V(最大)

  • 逻辑电压 - VIL,VIH:

    1.5V,3.6V

  • 电流 - 峰值输出(灌入,拉出):

    400mA,650mA

  • 输入类型:

    反相

  • 上升/下降时间(典型值):

    50ns,30ns

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    14-DIP(0.300",7.62mm)

  • 供应商器件封装:

    14-DIP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14DIP

供应商型号品牌批号封装库存备注价格
STM
24+
28
询价
STM
22+
原廠原封
5000
原装现货库存.价格优势!!
询价
ST
23+
8-DIP
65600
询价
STMicroelectronics
24+
14-DIP
65200
一级代理/放心采购
询价
STM
25+
DIP-14
1001
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
22+
14DIP
9000
原厂渠道,现货配单
询价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
STM
23+
PDIP 14
3880
正品原装货价格低
询价
更多L6386E供应商 更新时间2025-10-9 13:31:00