型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
L6386E | High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:217.74 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:217.74 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:217.74 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
L6386E | 带嵌入式比较器和自举二极管的HV高低侧驱动器 The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sin • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •400 mA source \n •650 mA sink \n• Switching times 50/30 nsec rise/fall with 1 nF load \n• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down \n• Undervoltage lockout; | ST 意法半导体 | ST | |
L6386E | Package:14-DIP(0.300",7.62mm);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14DIP | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14SO | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 14SO | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
产品属性
- 产品编号:
L6386E
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)
- 驱动配置:
半桥
- 通道类型:
独立式
- 栅极类型:
IGBT,N 沟道 MOSFET
- 电压 - 供电:
17V(最大)
- 逻辑电压 - VIL,VIH:
1.5V,3.6V
- 电流 - 峰值输出(灌入,拉出):
400mA,650mA
- 输入类型:
反相
- 上升/下降时间(典型值):
50ns,30ns
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
14-DIP(0.300",7.62mm)
- 供应商器件封装:
14-DIP
- 描述:
IC GATE DRVR HALF-BRIDGE 14DIP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
24+ |
28 |
询价 | ||||
STM |
22+ |
原廠原封 |
5000 |
原装现货库存.价格优势!! |
询价 | ||
ST |
23+ |
8-DIP |
65600 |
询价 | |||
STMicroelectronics |
24+ |
14-DIP |
65200 |
一级代理/放心采购 |
询价 | ||
STM |
25+ |
DIP-14 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
22+ |
14DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
STM |
23+ |
PDIP 14 |
3880 |
正品原装货价格低 |
询价 |
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