High-voltage high and low side driver

Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

文件：208.31 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side driver

文件：293.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

High-voltage high and low side driver

Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

文件：208.31 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side driver

文件：293.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side driver

文件：293.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

带嵌入式比较器和自举二极管的HV高低侧驱动器

The L6386AD is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently si • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability \n •400 mA source \n •650 mA sink \n• Switching times 50/30 nsec rise/fall with 1 nF load \n• CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down \n• Undervoltage lockout ;

ST

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体