Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

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艾赛斯

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

文件：213.04 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 76A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel Enhancement Mode

文件：213.04 Kbytes 页数：6 Pages

IXYS

艾赛斯