N-Channel Enhancement Mode

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to

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艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 150V(Min) • Static drain-source on-resistance : RDS(on) ≤ 16mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Switching Application

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无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

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力特

isc N-Channel MOSFET Transistor

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无锡固电

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

文件：198.68 Kbytes 页数：6 Pages

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

文件：198.68 Kbytes 页数：6 Pages

IXYS

艾赛斯