Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

文件：198.68 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：301.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

Littelfuse

力特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：513.429 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：513.429 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：513.429 Kbytes 页数：5 Pages

CET-MOS

华瑞