N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：165.56 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：180.74 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 178A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V ·Avalanche Rated ·Fast Intrinsic Diode APPLICATIONS · Easy to Mount ·Space Savings ·High Power Density

文件：345.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

文件：643.05 Kbytes 页数：7 Pages

NCEPOWER

新洁能