IXTK120N20P数据手册批发供应无锡固电ISC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IXTK120N20P	文件：196.99 Kbytes Page：5 Pages	N-Channel Enhancement Mode Avalanche Rated	IXYS IXYS Integrated Circuits Division
IXTK120N20P	文件：295.11 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP120N20NFD	文件：1.30327 Mbytes Page：12 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IXFH120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings	IXYS IXYS Integrated Circuits Division
IXFK120N20	文件：328.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFK120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio	IXYS IXYS Integrated Circuits Division
IXFK120N20P	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFK120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings	IXYS IXYS Integrated Circuits Division
IXFK120N20P	文件：135.75 Kbytes Page：5 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division
IXFN120N20	文件：69.86 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess	IXYS IXYS Integrated Circuits Division
IXFN120N20	文件：535.83 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFR120N20	文件：372.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXFR120N20	文件：180.52 Kbytes Page：3 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division
IXFR120N20	文件：34.51 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo	IXYS IXYS Integrated Circuits Division
IXFX120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio	IXYS IXYS Integrated Circuits Division
IXFX120N20	文件：367.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXTQ120N20P	文件：301 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IXTQ120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Integrated Circuits Division

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供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXTK120N20P	IXYS	23+	TO-264(IXTK)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市特顺芯科技有限公司	IXTK120N20P	IXYS	08+(pbfree)	TO-264	8866		询价
中科航电(深圳)半导体技术有限公司	IXTK120N20P	IXYS	2019+	TO-264-3	65500	TO-264AA	询价
深圳市宏捷佳电子科技有限公司	IXTK120N20P	IXYS	23+	TO-264	12300	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	IXTK120N20P	IXYS	18+	TO-3PL	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	IXTK120N20P	IXYS	23+	TO-3PL	548		询价
深圳市艾宇欣科技有限公司	IXTK120N20P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳兆威电子有限公司	IXTK120N20P	IXYS/艾赛斯	23+	TO-264	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市科雨电子有限公司	IXTK120N20P	IXYS	1809+	TO-264	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXTK120N20P	IXYS/艾赛斯	23+	TO-264	10000	公司只做原装正品	询价

更多IXTK120N20P供应商更新时间2024-4-26 20:22:00

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