CoolMOS Power MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● 2ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive

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N通道超级结MOSFET

• 硅片固定在直接敷铜基板上\n• 第3代CoolMOS™\n功率MOSFET\n•增强的总功率密度\n•低热阻;

Littelfuse

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CoolMOS Power MOSFET

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CoolMOS Power MOSFET

文件：117.89 Kbytes 页数：2 Pages

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CoolMOS Power MOSFET in ISOPLUS247 Package

CoolMOS Power MOSFET in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base Features ● ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for

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