isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

PolarHT HiPerFET Power MOSFET

文件：314.72 Kbytes 页数：5 Pages

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艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHT HiPerFET Power MOSFET

文件：314.72 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHT HiPerFET Power MOSFET

文件：314.72 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

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IXYS

艾赛斯