IRGB4B60KPBF资料datasheet下载行情报价IRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRGB4B60KPBF	文件：324.07 Kbytes Page：14 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor 文件：324.07 Kbytes 页数：14 Pages	IRF	IRF
IRGB4B60KPBF	文件：366.25 Kbytes Page：14 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor 文件：366.25 Kbytes 页数：14 Pages	IRF	IRF
IRGB4B60KPBF	文件：325.03 Kbytes Page：14 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：325.03 Kbytes 页数：14 Pages	IRF	IRF
IRGB4B60KPBF_15	文件：325.03 Kbytes Page：14 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：325.03 Kbytes 页数：14 Pages	IRF	IRF
IRGB4B60KPBF	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：卷带（TR）类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 12A 63W TO220A	INFINEON 英飞凌	INFINEON

更多IRGB4B60KPBF供应商更新时间2026-1-29 16:30:00