IRGIB7B60KD中文资料下载库存现货英飞凌IRF-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRGIB7B60KD	文件：435.57 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low	IRF International Rectifier	IRF
IRGIB7B60KDPBF	文件：902.75 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform	IRF International Rectifier	IRF
IRGIB7B60KDPBF	文件：911.72 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRF International Rectifier	IRF
IRGIB7B60KDPBF_15	文件：911.72 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRF International Rectifier	IRF
IRGIB7B60KDPBF	文件：100 bytes Page：1 Pages	Package：TO-220-3 整包；包装：卷带（TR）类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 12A 39W TO220FP	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon

更多IRGIB7B60KD供应商更新时间2025-7-20 11:04:00