INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)

Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to

文件：239.87 Kbytes 页数：6 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT

Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to

文件：145.33 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host o

文件：266.41 Kbytes 页数：6 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)

Infineon

英飞凌