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IRGIB15B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureRatedat175°C Benefits •BenchmarkE

IRF

International Rectifier

IRGIB15B60KD1

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=15A ·HighSpeedSwitching ·LowDiodeVF APPLICATIONS ·BenchmarkEfficiencyforMotorControl. ·IndustrialDrives ·SolarInverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRGIB15B60KD1P

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureRatedat175°C •Lead-Free Benefits

IRF

International Rectifier

IRGIB15B60KD1P

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGIB15B60KD1P_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGIB15B60KD1P

Package:TO-220-3 整包;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 19A 52W TO220FP

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IRGIB15B60KD1

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

供应商型号品牌批号封装库存备注价格
IR
24+
TO-220FullPak
8866
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
23+
TO-220F
8600
全新原装现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
24+
65230
询价
IR/VISHAY
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
IR
21+
TO-220F
10000
原装现货假一罚十
询价
IR
22+
TO-220FullPak
6000
十年配单,只做原装
询价
IR/VISHAY
23+
TO-220F
6000
原装正品,支持实单
询价
IR
23+
TO-220F
8560
受权代理!全新原装现货特价热卖!
询价
更多IRGIB15B60KD1供应商 更新时间2025-5-3 16:30:00