INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C Benefits • Benchmark E

文件：287.14 Kbytes 页数：12 Pages

IRF

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC= 15A · High Speed Switching · Low Diode VF APPLICATIONS · Benchmark Efficiency for Motor Control. · Industrial Drives · Solar Inverters

文件：326.28 Kbytes 页数：3 Pages

ISC

无锡固电

600V Low-Vceon Copack IGBT in a TO-220 FullPak package

第 5 代超快 600 V、15 A IGBT，采用 TO-220 Full-Pak 封装，并配有针对低传导损耗进行优化的低 Vf 二极管。降低的功耗和软开关行为，可实现更好的热性能和电磁干扰行为，从而降低系统成本。降低成本同时实现优异性能。 • 低 VCEon 无穿通 IGBT 技术\n• 低 VF 二极管\n• 10 µs 短路能力\n• 方形 RBSOA\n• 超软二极管逆恢复特征\n• VCEon 正温度系数\n\n优势:\n• 电机控制基准效率\n• 可靠的瞬态性能\n• 低 EMI\n• 并联运行时出色的电流共享;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits

文件：387.02 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：387.99 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：387.99 Kbytes 页数：13 Pages

IRF

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 19A 52W TO220FP

Infineon

英飞凌