IRGBC40M资料datasheet下载批发采购英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRGBC40M	文件：45.25 Kbytes Page：2 Pages	INSULATED GATE BIPOLAR TRANSISTOR Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：45.25 Kbytes 页数：2 Pages	IRF	IRF
IRGBC40M	文件：98.39 Kbytes Page：35 Pages	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 页数：35 Pages	IRF	IRF
IRGBC40M-S	文件：88.62 Kbytes Page：2 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：88.62 Kbytes 页数：2 Pages	IRF	IRF
IRGBC40M	文件：300 bytes Page：1 Pages	INSULATED GATE BIPOLAR TRANSISTOR	Infineon 英飞凌	Infineon
IRGBC40M-S	文件：300 bytes Page：1 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)	Infineon 英飞凌	Infineon

更多IRGBC40M供应商更新时间2025-11-23 8:10:00