INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C Benefits • Benchmark E

文件：386.19 Kbytes 页数：12 Pages

IRF

600V Low-Vceon Copack IGBT in a TO-220 FullPak package

采用 TO-220 Full-Pak 封装的第五代超快 600 V, 10 A IGBT 与低 Vf 二极管联合封装，经过优化可实现较低的通态损耗。降低的功率损耗和软开关行为，有助于热性能的提升和 EMI 行为的改善，导致系统成本下降。可以更低的成本获得出色的性能。 • 低 VCE(on) 非穿通型 IGBT 技术\n• 低二极管 VF\n• 10 μS 短路能力\n• 方形 RBSOA\n• 超软二极管反向恢复特性\n• 正 VCE(ON) 温度系数\n\n优势:\n• 电机控制基准效率\n• 强健的瞬态性能\n• 低 EMI\n• 并联工作时电流共享表现出色;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits

文件：452.82 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-

文件：444.23 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：453.78 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：453.78 Kbytes 页数：13 Pages

IRF

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 16A 44W TO220FP

Infineon

英飞凌