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IRFRU110A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFU110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半导体

IRFU110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFU110

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU110A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFU110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半导体

IRFU110PBF

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU110PBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFU110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFY110

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY110C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRLD110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRLD110

HEXFETPOWERMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLD110PBF

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRLD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRLL110

100VN-ChannelMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance •VDS(V)=100V •RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

详细参数

  • 型号:

    IRFR110A

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    Advanced Power MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO 252
155816
明嘉莱只做原装正品现货
询价
FAIRCHILD
23+
TO-252
9526
询价
IR
05+
TO-252
15000
原装进口
询价
FSC
17+
TO-252
6200
询价
IR
23+
原厂原装
3000
全新原装
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
19+
TO-252
74949
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
FAIRCHILD
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHILD/仙童
18+
TO-252
41200
原装正品,现货特价
询价
FAIRCHILD/仙童
21+
TO-252
50000
终端可免费提供样品,欢迎咨询
询价
更多IRFR110A供应商 更新时间2024-6-15 14:19:00