Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.)

文件：256.82 Kbytes 页数：7 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

文件：373.66 Kbytes 页数：2 Pages

ISC

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N-channel Enhancement Mode Power MOSFET

Features • VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.4359 Mbytes 页数：4 Pages

BYCHIP

百域芯

Advanced Power MOSFET

文件：257.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体