N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.4359 Mbytes 页数：4 Pages

Bychip

百域芯

Advanced Power MOSFET

文件：257.57 Kbytes 页数：7 Pages

Fairchild

仙童半导体

HEXFET짰Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：1.84729 Mbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power

文件：1.37078 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.88858 Mbytes 页数：7 Pages

KERSEMI