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IRFR1N60A

PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A)

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60A

SMPSMOSFET

IRF

International Rectifier

IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半导体

IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

IRFR1N60A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=7Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1N60A

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半导体

IRFR1N60APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半导体

IRFR1N60APBF

SMPSMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFC1N60AB

  • 制造商:

    Vishay Semiconductors

  • 功能描述:

    MOSFET N-CHANNEL 600V - Bulk

供应商型号品牌批号封装库存备注价格
IR
22+
ORDER
6000
终端可免费供样,支持BOM配单
询价
IR
23+
ORDER
8000
只做原装现货
询价
IR
23+
ORDER
7000
询价
IR
23+
SMD
12500
全新原装现货热卖,价格优势
询价
VISHAY/威世
23+
STAND
12116
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
1923+
裸片
2000
公司原装现货特价处理
询价
IR
2016+
Thewafer
6528
房间原装进口现货假一赔十
询价
更多IRFC1N60AB供应商 更新时间2025-5-17 14:00:00