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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRFD210	文件：173.36 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210	文件：52.32 Kbytes Page：6 Pages	0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc	Intersil Intersil Corporation	Intersil
IRFD210	文件：360.56 Kbytes Page：6 Pages	0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	HARRIS Harris Corporation	HARRIS
IRFD210	文件：1.6013 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210	文件：843.37 Kbytes Page：9 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210PBF	文件：1.79775 Mbytes Page：8 Pages	HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210PBF	文件：1.6013 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD210PBF	文件：843.37 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFE210	文件：202.29 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R?쏷RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners	IRF International Rectifier	IRF
IRFE210	文件：161.95 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF

详细参数

型号：
IRFC210R
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFC210R	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFC210R	IR	23+		8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFC210R	IR	23+		7000		询价
深圳市拓亿芯电子有限公司	IRFC22N50AC	IR	23+	SMD	12500	全新原装现货热卖,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	IRFC234	VISHAY/威世	23+	STAND	12116	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市永贝尔科技有限公司	IRFC240	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市莱克讯科技有限公司	IRFC250	IR	1923+	裸片	2000	公司原装现货特价处理	询价
深圳市科恒伟业电子有限公司	IRFC250NB	IR	2016+	Thewafer	6528	房间原装进口现货假一赔十	询价
深圳市英瑞芯科技有限公司	IRFC250NB	IR	22+	Thewafer	8900	英瑞芯只做原装正品!!!	询价

更多IRFC210R供应商更新时间2025-5-16 14:00:00

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