Power MOSFET

文件：199.04 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

Description Third Gneration HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial app

文件：169.69 Kbytes 页数：6 Pages

IRF

Advanced Power MOSFET

文件：233.1 Kbytes 页数：7 Pages

Fairchild

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：678.89 Kbytes 页数：9 Pages

Fairchild

仙童半导体