N-Channel Power MOSFETs, 10A, 350V/400V

文件：154.43 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel Mosfet Transistor

文件：65.209 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs

文件：345.62 Kbytes 页数：5 Pages

ARTSCHIP

丝印：IRF7424；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：349.79 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7424；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：349.79 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7424；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：308.64 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：110.12 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：173.21 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. •

文件：229.68 Kbytes 页数：9 Pages

IRF

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：308.64 Kbytes 页数：9 Pages

EVVOSEMI

翊欧