Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.16 Kbytes 页数：9 Pages

IRF

HEXFET® Power MOSFET

Description\nFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides

Infineon

英飞凌

Ultra Low On-Resistance

文件：264.75 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：264.75 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：211.18 Kbytes 页数：9 Pages

IRF