Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

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IRF

丝印：IRF7413；Package：SOP-8；Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

文件：422.14 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7413；Package：SOP-8；MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：394.37 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vo =30Vlo 124 Rosin

文件：1.99792 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 20V (D-S) MOSFET

文件：1.89771 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

fast suitching

文件：263.63 Kbytes 页数：9 Pages

IRF